Selected Papers

Electron/ion/cluster source - Two of compact pulsed accelerators of particles on the accelerating voltage 10-50 kV and 200-700 kV are considered in the report. These pulsed accelerators consist of pulsed high voltage generator and vacuum diode. These devices have a few modes of operation in the dependence of kinds of particles. The main applications of these small accelerators are presented. The conception of linear inductor accelerator with injector on the basis of this kind of accelerator is discussed

E-gun with HTSC - The conception of pulsed high current electron sources with compressing of electron beam in the tube anode made from high temperature superconductor for receiving of high power density of pulsed electron beams is considered in this report. The design and main experimental results of this kind of electron source is presented. The parameters of this electron source: kinetic energy 0.3 -0.8 MeV, pulse duration 300 ns, beam current 0.1- 2.0 kA max. power density 500 GW/cm2. The device for output of electron beam to air is described.

SiC - The properties of nitrogen-doped amorphous SiC films that were irradiated by pulsed electron beams are presented. The I-V charasteristics of diodes made on irradiated SiC films grown on silicon substrates are investigated. The results confirm the fact that the electrical properties of these diodes have a dependence on nitrogen concentration and on conditions of electron beam irradiation.

Electron low energy accelerators - The low energy electron beams physics and their applications is presented in this review. The general principles for production of low energy electron beams are considered. The main constructions of electron accelerators are described. The potential applications for low energy electron beams are considered.

Ni foil - The study of effects of high-current charged particle beam interaction with matter.

Carbon Electrodes - The results of surface modification of electro-grade graphite-electrodes by pulsed high current electron beam with kinetic energy 200-500 keV,currentdensity 100-2000 A/cm2, pulse duration 300 ns to increase pulsed electrical insulationof vacuum gaps between these graphite electrodes are considered. An explanation of increasing of electrical insulation due to surface modification is suggested.

Deposition of carbon nitride films by vacuum ion diode with explosive emission - Carbon nitride films were synthesized using a novel technique based on the pulsed high voltage ion/electron diode with explosive emission (pulsed voltage 200-700 kV pulsed current 100-500 A cm-2 (ions) 150-2000 A cm-2 (electrons)). The method and its novel features are discussed as well as its application to the formation of the crystalline -phase in C3N4 films. Mixed elemental nitrogen and carbon films are formed by sequential deposition then subjected to ion and/or electron beam mixing to synthesize the C3N4 structure. The experimental conditions used for this pulsed process are described and the efficiency of the method for nitrogen incorporation is demonstrated. The results presented indicate that -C3N4 crystallites are formed in an amorphous matrix.